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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 3.3A 8TSSOP
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.3A
- Rds On (Max) @ Id, Vgs：45mOhm @ 3.9A, 4.5V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：800mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The SI6925ADQ-T1-E3 is a dual N-channel MOSFET from the Vishay Siliconix SI69 series, housed in an 8-lead TSSOP package. It features a 20V drain-source voltage rating and supports a continuous drain current of 4.5A per channel. The device utilizes TrenchFET technology to achieve a low on-resistance of 30mΩ at a gate-source voltage of 8V. Designed for surface-mount applications, it operates within a temperature range of -55°C to +150°C and includes lead-free construction compliant with RoHS standards.
Feature Summary
- Dual N-channel configuration integrated into a single compact TSSOP-8 package
- TrenchFET power FET technology for optimized on-resistance and switching performance
- Enhanced gate charge characteristics suitable for low-voltage drive applications
Applications
- Low-side switching in battery-powered portable devices
- DC-DC converter output stages
- Load switching in automotive electronics
Procurement Notes
Verify the specific suffix T1-E3 against the manufacturer's official datasheet to confirm tape-and-reel packaging and lead-free status. Ensure the ordering part number matches the exact electrical specifications required for the design. Cross-reference with authorized distributors to confirm current availability and authenticity before procurement.
Selection Notes
Select this component when a dual N-channel solution is required in a small footprint. The 20V rating and 4.5A current capacity suit low-voltage logic-level applications. Verify that the 30mΩ on-resistance meets thermal requirements for the intended load current. Confirm compatibility with the system's gate drive voltage levels.
Part Context
This part belongs to the Vishay SI69 series of dual N-channel MOSFETs. It shares the TSSOP-8 package form factor with other members like the SI6926ADQ but differs in voltage and current ratings. The series is designed for space-constrained consumer and industrial applications requiring efficient power switching.
Replacement Considerations
Check for direct pin-compatible alternatives within the same series, such as the SI6926ADQ, if higher current handling is needed. Verify that any substitute maintains the same TSSOP-8 package and electrical parameters to ensure board compatibility without redesign.
