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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 4.1A 8TSSOP
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.1A
- Rds On (Max) @ Id, Vgs：30mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI6926ADQ-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a 20 V drain-source voltage (VDS) and an 8 V gate-source voltage (VGS). The device provides a maximum continuous drain current of 4.5 A at 25 °C, with a typical on-state resistance (RDS(on)) of 0.030 Ω at VGS = 4.5 V. Key electrical parameters include a gate threshold voltage of 0.40 V to 1.0 V, total gate charge of 7.5 nC to 10.5 nC, and forward transconductance of 26 S. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a TSSOP-8 package.
Feature Summary
- Dual N-channel configuration integrated into a single TSSOP-8 surface-mount package for space-constrained designs.
- TrenchFET power MOSFET technology engineered to deliver low on-state resistance and high switching efficiency.
- Halogen-free construction compliant with RoHS standards.
Applications
- Low-voltage battery-powered equipment
- DC-to-DC converters
- Power management circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free status. Confirm that the component meets all applicable environmental compliance requirements for the intended deployment region. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity and traceability of the silicon die and packaging materials.
Selection Notes
Select this component when a compact dual-switch solution is required for low-voltage applications. The TSSOP-8 package offers a reduced footprint compared to traditional SOIC packages while maintaining adequate thermal performance. Evaluate the RDS(on) specifications at the specific gate drive voltages used in the target circuit to ensure optimal conduction losses are met under expected operating conditions.
Part Context
This part belongs to the Vishay LITTLE FOOT series, which utilizes standard IC packages modified with custom leadframes to handle power dissipation. The Si6926ADQ represents a dual-die implementation within the TSSOP-8 form factor, designed to minimize board area usage while providing independent control of two N-channel channels.
Replacement Considerations
Direct replacements must match the 20 V VDS rating, dual N-channel topology, and TSSOP-8 pinout. Verify that any substitute maintains equivalent RDS(on) characteristics at the system's operating gate voltage and adheres to the same thermal resistance limits for reliable operation.
