SI6933DQ-T1-E3

$0.89

Description：MOSFET 2P-CH 30V 8TSSOP
Series：TrenchFET®

SKU:41a861218c34 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 8TSSOP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：45mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：8-TSSOP
Grade：-
Qualification：-

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SI6933DQ-T1-E3

Overview

The SI6933DQ-T1-E3 is a dual P-channel MOSFET from the TrenchFET family, manufactured by Vishay Siliconix. It utilizes advanced silicon gate technology to achieve extremely low on-resistance and fast switching speeds. The device is housed in an 8-pin TSSOP surface-mount package, designed for high-density applications. Key electrical characteristics include a drain-source voltage rating of 30V and a continuous drain current capability suitable for power management circuits. The component operates within a temperature range of -55°C to +150°C, ensuring reliability in demanding environments.

Feature Summary

Dual P-channel configuration integrated into a single compact package
TrenchFET technology for optimized on-resistance and switching performance
Surface-mount design compatible with automated assembly processes

Applications

Power management circuits
Battery protection systems
Load switch applications

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices, as availability may be limited. Ensure storage conditions meet specified humidity and temperature requirements to maintain device integrity prior to installation.

Selection Notes

Select this component for designs requiring dual P-channel switching in space-constrained layouts. Evaluate thermal performance under maximum load conditions to ensure junction temperatures remain within safe operating limits. Compare on-resistance values against system efficiency requirements to validate suitability for specific power delivery paths.

Part Context

This part belongs to the SI6 series of MOSFETs, representing Vishay's focus on high-efficiency power solutions. The TrenchFET branding indicates the use of vertical trench gate structures to reduce conduction losses. It serves as a modern alternative to older discrete dual MOSFET arrangements, offering improved board space utilization and consistent electrical matching between channels.