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The SI6953DQ is a P-Channel MOSFET manufactured by Vishay / Siliconix, utilizing TrenchFET technology. It features a drain-to-source voltage of 20V and a continuous drain current of 1.9A at 25°C. The device operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1W. It is housed in an SOT-23 surface-mount package.
This component is officially listed as obsolete or discontinued by the manufacturer. Availability is restricted, and sourcing may be limited to surplus channels. Verify part authenticity and condition carefully when procuring from third-party distributors due to the end-of-life status.
Select this component only if legacy compatibility with the 20V P-Channel specification is required. Consider modern equivalents from the same family or alternative manufacturers offering active status and improved availability. Ensure the SOT-23 footprint matches the existing design constraints.
The SI6953DQ belongs to the SI6 series of MOSFETs produced by Vishay / Siliconix. This series utilizes TrenchFET technology to provide efficient switching capabilities. The specific model represents a compact solution for low-voltage power management tasks in consumer and industrial electronics.
Verify cross-references such as SI6953DD-T1-GE3 for identical specifications. Consult official substitution guides for updated components with active manufacturing status.