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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 4A 8TSSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：30mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The SI6966DQ-T1-E3 is a dual N-channel MOSFET from the Vishay Siliconix SI6 series, utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and a continuous drain current of 4 A. The device integrates two independent channels with built-in body diodes in an 8-pin TSSOP package. Key electrical parameters include a maximum on-resistance of 0.03 Ω and a maximum operating temperature of 150 °C. The component is RoHS compliant and classified as a general-purpose small signal transistor.
Feature Summary
- Dual channel configuration with integrated body diodes for efficient power switching
- TrenchFET technology designed to minimize on-resistance and improve efficiency
- Enhancement mode operation suitable for general-purpose small signal applications
Applications
- General-purpose small signal switching circuits
- Low voltage power management systems
- Battery protection and load switch applications
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notices, as availability may be restricted. Ensure packaging details match project requirements before finalizing orders.
Selection Notes
Select this component for designs requiring dual N-channel switching with low on-resistance. Verify that the 20 V voltage rating and 4 A current capacity meet circuit demands. Consider thermal performance within the TSSOP-8 package for heat dissipation needs.
Part Context
This part belongs to the Vishay SI6 series of TrenchFET MOSFETs. It is a dual-channel variant offering compact integration for space-constrained designs. The E3 suffix indicates lead-free construction, aligning with modern environmental standards for electronic components.
Replacement Considerations
Consult official Vishay documentation for verified substitute part numbers. Cross-reference pinouts and electrical specifications carefully when considering alternative components to ensure compatibility.
