ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 8TSSOP
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：30mOhm @ 5.2A, 4.5V
- Vgs(th) (Max) @ Id：600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
Download product information
Overview
The SI6966EDQ-T1-E3 is a dual N-channel MOSFET from the Vishay Siliconix SI6 series, utilizing TrenchFET technology. It features an 8-pin TSSOP surface-mount package with a maximum drain-source voltage of 20 V and a continuous drain current of 4 A. The device exhibits a maximum on-resistance of 0.03 Ω. It operates within a temperature range up to 150 °C junction temperature. The component is lead-free and RoHS compliant, designed for general-purpose small signal applications.
Feature Summary
- Dual N-channel configuration with integrated body diodes in a compact TSSOP-8 package
- TrenchFET technology providing low on-resistance for efficient power switching
- Lead-free construction ensuring compliance with environmental directives
Applications
- General-purpose small signal switching circuits
- Low-voltage DC-DC converter topologies
- Battery protection and management systems
Procurement Notes
This component is officially listed as End-of-Life (EOL) by the manufacturer. Availability is restricted or non-existent through standard distribution channels. Verification of stock status requires direct consultation with authorized distributors or the manufacturer's official lifecycle documentation. Designers should treat this part as obsolete for new production runs.
Selection Notes
Engineers requiring a replacement must evaluate alternative dual N-channel MOSFETs with compatible 20 V ratings and similar Rds(on) specifications. The TSSOP-8 footprint compatibility should be verified against potential substitutes. Since the original part is discontinued, selecting a pin-compatible alternative with updated manufacturing support is critical for maintaining supply chain stability.
Part Context
The SI6966EDQ-T1-E3 belongs to the Vishay SI6 family of TrenchFET MOSFETs. This series is characterized by optimized gate charge and low on-resistance for high-efficiency applications. The specific model integrates two independent N-channel FETs into a single package, offering space savings compared to discrete solutions while maintaining robust thermal performance.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult Vishay's official obsolescence notices or distributor cross-reference tools for validated alternatives.
