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Product Detailed Parameters
- Description：MOSFET 2P-CH 12V 4A 8TSSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：30mOhm @ 4.6A, 4.5V
- Vgs(th) (Max) @ Id：800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The SI6969BDQ-T1-GE3 is a single N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET power technology. It is housed in an SOIC-8 surface-mount package. The device features a drain-source voltage rating of 20 V and a continuous drain current of 45 A at 25°C. Its maximum on-resistance is specified as 3.7 mΩ at a gate-source voltage of 10 V. The component supports a junction temperature range from -55°C to +175°C with a power dissipation capacity of 7.4 W.
Feature Summary
- TrenchFET power technology for optimized performance
- Enhanced switching characteristics
- Lead-free finish and halogen-free construction
Applications
- DC-DC converters
- Power management circuits
- Load switches
Procurement Notes
Verify the specific ordering suffix against official Vishay documentation to confirm tape and reel quantities and packaging details. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration. Ensure the component meets all relevant REACH regulations before integration into final assemblies.
Selection Notes
Select this component when a low-voltage, high-current N-channel switch is required in an SOIC-8 footprint. Evaluate thermal resistance values relative to the PCB copper area to ensure adequate heat dissipation. Compare the on-resistance specifications against alternative packages if higher current density is needed.
Part Context
This part belongs to the Vishay Siliconix TrenchFET family, designed for efficient power switching applications. The SOIC-8 package provides a compact solution for surface-mount assembly processes. The product line emphasizes low on-resistance and fast switching speeds for modern power electronics.
Replacement Considerations
Consult official Vishay cross-reference tools for verified alternatives. Ensure any substitute matches the SOIC-8 pinout, voltage ratings, and thermal characteristics. Verify that replacement parts maintain equivalent switching performance and package dimensions.
