SI6969DQ-T1-E3

$0.65

Description：MOSFET 2P-CH 12V 8TSSOP
Series：TrenchFET®

SKU:2db477cd47fc Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 12V 8TSSOP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：34mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id：450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：40nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：8-TSSOP
Grade：-
Qualification：-

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SI6969DQ-T1-E3

Overview

The SI6969DQ-T1-E3 is a dual P-channel MOSFET array manufactured by Vishay Siliconix using TrenchFET technology. It features a drain-source voltage of -12V and a maximum on-resistance of 34mΩ at Vgs = -4.5V and Id = 4.6A. The device supports a continuous drain current of 4.6A and dissipates up to 1.1W of power. Packaged in an 8-TSSOP surface-mount case, it operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Dual P-channel configuration for efficient power switching applications
TrenchFET technology ensures low conduction losses
Logic-level gate drive compatibility with standard digital control systems

Applications

Portable electronic device power management modules
Industrial automation control system power switches
Automotive electronics load driving units

Procurement Notes

This component is officially classified as obsolete by the manufacturer. Verification of availability requires checking authorized distributors for remaining stock or surplus channels. Buyers must confirm the authenticity of existing inventory due to the discontinuation status. Alternative sourcing strategies should be evaluated immediately to ensure supply chain continuity for ongoing production needs.

Selection Notes

Designers should verify that the -12V rating meets circuit requirements. The 34mΩ on-resistance specification applies specifically at -4.5V gate drive; lower logic levels may increase resistance. Thermal management must account for the 1.1W dissipation limit in the TSSOP-8 package. Ensure the replacement part number matches the exact suffix specifications for pinout and electrical characteristics.

Part Context

The SI6969DQ-T1-E3 belongs to the Vishay Siliconix SI6 series of TrenchFET devices. This series utilizes advanced trench gate technology to optimize performance metrics such as on-resistance and switching speed. The specific model integrates two independent P-channel MOSFETs into a single compact package, facilitating space-constrained board designs while maintaining robust electrical isolation between channels.