SI6983DQ-T1-GE3

$0.52

Description：MOSFET 2P-CH 20V 4.6A 8TSSOP
Series：TrenchFET®

SKU:f1c99f84f563 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 4.6A 8TSSOP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：4.6A
Rds On (Max) @ Id, Vgs：24mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs：30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：830mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：8-TSSOP
Grade：-
Qualification：-

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SI6983DQ-T1-GE3

Overview

The SI6983DQ-T1-GE3 is a P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a drain-source voltage (Vds) of -20 V and a continuous drain current (Id) of -5.4 A. The device exhibits a maximum on-resistance (Rds(on)) of 24 mΩ at a gate-source voltage (Vgs) of -4.5 V. Power dissipation is rated at 1.14 W. The component is housed in an SOT-323 package and operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

TrenchFET technology for optimized performance
Low on-resistance for efficient power switching
Enhancement mode operation

Applications

Power management circuits
Load switches
Battery protection systems

Procurement Notes

Verify the specific ordering suffix and manufacturer documentation to confirm exact electrical characteristics and packaging details. Cross-reference with official Vishay datasheets to ensure compliance with design requirements before procurement.

Selection Notes

Select this component for applications requiring low-voltage P-channel switching with moderate current capabilities. Ensure thermal management aligns with the 1.14 W power dissipation rating and verify compatibility with the SOT-323 footprint.

Part Context

This part belongs to the SI6 series of MOSFETs from Vishay Siliconix. It is designed for portable electronics and battery-powered devices where space efficiency and low resistance are critical. The TrenchFET process enhances switching speed and reduces conduction losses compared to standard planar technologies.

Replacement Considerations

Check for direct pin-compatible alternatives with similar Vds, Id, and Rds(on) specifications. Verify package compatibility and thermal performance when substituting.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.