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The Vishay Siliconix SI7220DN-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in a leadless PowerPAK 1212-8 surface-mount package. It features a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 4.8 A at 25 °C. The device exhibits a maximum on-state resistance (RDS(on)) of 0.060 Ω at VGS = 10 V and 4.8 A. Total gate charge (Qg) is typically 13 nC at VGS = 10 V. Thermal performance includes a junction-to-case thermal resistance (RthJC) of 4.3 °C/W and a junction-to-ambient resistance (RthJA) of 77 °C/W. Operating temperatures range from -55 °C to +150 °C.
Verify the specific ordering suffix against official documentation. The SI7220DN-T1-E3 designation indicates a lead-free component. Confirm compliance requirements such as RoHS or REACH status directly with the manufacturer's datasheet, as suffix variations may alter halogen content or packaging specifications without changing electrical function.
Select this component for designs requiring a dual N-channel MOSFET with a 60 V rating in a space-constrained layout. Evaluate the 0.060 Ω RDS(on) specification against load current requirements to ensure acceptable conduction losses. Consider the 4.3 °C/W junction-to-case thermal resistance for heat dissipation planning relative to the PCB copper area.
This part belongs to the Vishay Siliconix Si7220 series of dual N-channel MOSFETs. It utilizes the PowerPAK 1212-8 package, which provides a footprint smaller than standard SO-8 packages while delivering superior thermal characteristics. The device is designed for high-efficiency switching applications where board space and thermal management are critical constraints.
Publicly confirmed substitute part numbers are not available in the provided source material.