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The Vishay Siliconix SI7222DN-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in a leadless PowerPAK 1212-8 package. It features a drain-source voltage of 40 V and a continuous drain current of 6 A at 25 °C case temperature. The on-state resistance is specified as 0.042 Ω at VGS = 10 V and 0.047 Ω at VGS = 4.5 V. Total gate charge is typically 19 nC at VGS = 10 V. The device supports an operating junction temperature range from -55 °C to +150 °C.
Verify the specific ordering suffix against official documentation before procurement. The -E3 suffix indicates lead-free construction. Confirm that the component meets RoHS and IEC 61249-2-21 halogen-free requirements if mandated by your design specifications. Cross-reference the manufacturer part number directly with authorized distributors to ensure authenticity and traceability.
Select this component when a compact dual N-channel solution is required for low-voltage applications. The 40 V rating and low on-resistance make it suitable for efficient power management. Ensure the PCB layout accommodates the PowerPAK 1212-8 footprint and provides adequate copper area for thermal dissipation given the package's small profile.
This component belongs to the Vishay Siliconix Si72xx series of dual MOSFETs. It is designed to replace single-channel solutions in space-constrained designs. The PowerPAK 1212-8 package offers a reduced profile compared to traditional SO-8 packages while maintaining robust thermal characteristics for surface mount assembly.
Consult the official datasheet or manufacturer for verified replacement options. No public substitute part numbers are confirmed in the provided source material.