SI7222DN-T1-GE3

Overview

The Vishay Siliconix Si7222DN-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a PowerPAK 1212-8 package with a maximum drain-source voltage of 40 V and a typical on-resistance of 0.042 Ω at VGS = 10 V. The device supports a continuous drain current of up to 6 A at TC = 25 °C, with a total gate charge of 19 nC. Operating junction temperatures range from -55 °C to +150 °C, and the component is halogen-free according to IEC 61249-2-21.

Feature Summary

• Dual N-channel configuration in a compact leadless PowerPAK 1212-8 package
• TrenchFET power MOSFET technology for low thermal resistance
• Halogen-free construction compliant with IEC 61249-2-21

Applications

• Primary side switching circuits
• Synchronous rectification applications

Procurement Notes

Verify the specific ordering suffix when sourcing components. The GE3 designation indicates lead-free and halogen-free compliance, whereas the E3 variant is lead-free only. Confirm that the requested part matches the exact suffix required for your assembly specifications to ensure material consistency.

Selection Notes

Select this component for designs requiring a dual N-channel MOSFET with a 40 V rating. Evaluate the 0.042 Ω on-resistance against your conduction loss requirements. Ensure the PowerPAK 1212-8 footprint aligns with your PCB layout constraints and verify thermal management capabilities for the intended operating environment.

Part Context

This component belongs to the Vishay Siliconix Si7222 series of dual N-channel MOSFETs. It shares the same core die and electrical characteristics as the Si7222DN-T1-E3, differing primarily in packaging compliance. Both variants utilize the PowerPAK 1212-8 surface-mount package.

Replacement Considerations

Si7222DN-T1-E3 is the direct lead-free equivalent without halogen-free certification.