SI7224DN-T1-E3

Description：MOSFET 2N-CH 30V 6A PPAK 1212
Series：TrenchFET®

SKU:358c923a241b Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 6A PPAK 1212
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6A
Rds On (Max) @ Id, Vgs：35mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：570pF @ 15V
Power - Max：17.8W, 23W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® 1212-8 Dual
Supplier Device Package：PowerPAK® 1212-8 Dual
Grade：-
Qualification：-

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SI7224DN-T1-E3

Overview

The Si7224DN-T1-E3 is a dual N-channel 30-V (D-S) MOSFET utilizing TrenchFET technology in a PowerPAK 1212-8 package. Channel 1 offers an on-state resistance of 0.035 Ω at VGS = 10 V and 0.042 Ω at VGS = 4.5 V, with a continuous drain current of 6 A. Channel 2 provides lower resistance at 0.028 Ω (VGS = 10 V) and 0.035 Ω (VGS = 4.5 V), also supporting 6 A. Total gate charge is typically 9.5 nC for Channel 1 and 12 nC for Channel 2 at VGS = 10 V. The device operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Dual N-channel configuration with independent channel characteristics
TrenchFET power MOSFET architecture for low on-resistance
PowerPAK 1212-8 leadless surface-mount package design

Applications

Notebook PC system power distribution
Low current point-of-load (POL) regulation

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The Si7224DN-T1-E3 designation indicates a lead-free component. Confirm that the required variant matches the exact suffix requirements for your manufacturing process, as alternative suffixes may exist for halogen-free specifications or different packaging configurations.

Selection Notes

Select this component when space-constrained designs require dual N-channel switching capabilities. The PowerPAK 1212-8 package provides superior thermal performance compared to standard SO-8 or TSSOP-8 packages. Ensure the application voltage does not exceed the 30-V drain-source rating and verify that the gate drive voltage aligns with the specified RDS(on) test conditions for optimal efficiency.

Part Context

This component belongs to the Vishay Siliconix TrenchFET family of power MOSFETs. It is manufactured by Vishay / Siliconix and utilizes silicon technology. The product is identified by document number 69500 and revision S-81549-Rev. B. The datasheet confirms compliance with RoHS directives.