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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 25A PPAK 1212
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：25A
- Rds On (Max) @ Id, Vgs：16.4mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：1220pF @ 10V
- Power - Max：23W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7232DN-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and operates within a -55 °C to +150 °C junction temperature range. The device provides a typical continuous drain current of 25 A at a case temperature of 25 °C, with an on-state resistance of 0.0164 Ω at VGS = 4.5 V and 0.0240 Ω at VGS = 1.8 V. Total gate charge is typically 12 nC at VGS = 4.5 V. It is housed in a leadless PowerPAK 1212-8 surface-mount package.
Feature Summary
- Dual N-channel configuration integrating two independent MOSFETs in a single compact package
- TrenchFET power MOSFET architecture for optimized switching performance
- Leadless PowerPAK 1212-8 package design providing low thermal impedance
Applications
- DC/DC converter circuits
- Notebook system power management
- Point-of-load (POL) regulation
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance status. Confirm that the component meets RoHS requirements and halogen-free specifications as defined by the manufacturer. Ensure the procurement channel sources directly from authorized distributors to maintain product integrity and traceability.
Selection Notes
Evaluate the required operating voltage against the 20 V maximum rating. Consider the thermal environment when selecting between the 25 A case-limited current and the lower ambient-limited current ratings. Verify that the gate drive voltage aligns with the specified RDS(on) conditions for optimal efficiency.
Part Context
This component belongs to the Vishay Siliconix Si72 series of dual N-channel MOSFETs. It utilizes the PowerPAK 1212-8 package, which offers a footprint significantly smaller than standard SO-8 packages while maintaining comparable thermal performance characteristics.
Replacement Considerations
Consult official replacement guides or datasheets for verified substitute part numbers. Do not assume functional equivalence based solely on package dimensions or nominal voltage ratings without verifying electrical parameters.
