SI7236DP-T1-GE3

Overview

The Si7236DP-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a PowerPAK SO-8 package with a drain-source voltage (VDS) of 20 V and a continuous drain current (ID) of 60 A at TC = 25 °C. The maximum on-state resistance (RDS(on)) is 5.2 mΩ at VGS = 4.5 V and 7.0 mΩ at VGS = 2.5 V. Total gate charge (Qg) is typically 68 nC at VGS = 10 V. Operating junction temperature ranges from -55 °C to +150 °C, with a maximum power dissipation of 46 W at TC = 25 °C.

Feature Summary

• Dual N-channel configuration in a compact leadless PowerPAK SO-8 package
• TrenchFET technology for low on-state resistance and fast switching
• High thermal efficiency with exposed drain pad for direct heat dissipation

Applications

• Synchronous rectification
• DC/DC point-of-load conversion

Procurement Notes

Verify the specific ordering suffix against official documentation. The GE3 suffix indicates lead-free and halogen-free compliance. Confirm RoHS status via manufacturer resources. Ensure component authenticity through authorized channels. Validate datasheet revision before final design implementation.

Selection Notes

Select this component for applications requiring high current density in a small footprint. Evaluate thermal management requirements based on the junction-to-case resistance. Verify gate drive voltage compatibility with specified RDS(on) thresholds. Consider the dual channel layout for space-constrained designs.

Part Context

This part belongs to the Si7 series of Vishay Siliconix MOSFETs. It shares the PowerPAK SO-8 form factor with other devices in the family. The dual configuration allows for integrated circuit solutions within standard SO-8 land patterns.

Replacement Considerations

Check pinout compatibility with existing SO-8 footprints. Verify electrical parameters such as VDS, ID, and RDS(on) match application requirements. Review thermal characteristics to ensure equivalent heat dissipation capabilities.