SI7252ADP-T1-GE3

$1.81

Description：MOSFET 2N-CH 100V 9.3A PPAK SO8
Series：TrenchFET®

SKU:51cd832e010c Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 9.3A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：9.3A (Ta), 28.7A (Tc)
Rds On (Max) @ Id, Vgs：18.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1266pF @ 50V
Power - Max：3.6W (Ta), 33.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：-
Qualification：-

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SI7252ADP-T1-GE3

Overview

The Si7252ADP-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 100 V drain-source voltage and a continuous drain current of 28.7 A at TC = 25 °C. The maximum on-state resistance is 18.6 mΩ at VGS = 10 V and 22.5 mΩ at VGS = 7.5 V. Total gate charge is typically 13.1 nC at VGS = 7.5 V. The device operates within a junction temperature range of -55 °C to +150 °C and is housed in a leadless PowerPAK SO-8 package.

Feature Summary

TrenchFET power MOSFET structure optimized for PWM applications
Dual configuration with independent N-channel devices
100% Rg and UIS tested for reliability

Applications

System power DC/DC converters

Procurement Notes

Verify the component against the official datasheet (Document Number: 79298) to confirm technical specifications and compliance. Ensure that the ordering suffix matches the required lead-free and halogen-free status. Cross-reference the manufacturer part number with authorized distributors to validate authenticity before procurement.

Selection Notes

Select this component for high-current switching applications requiring low on-resistance and fast switching speeds. Consider the thermal derating curves when designing for ambient temperatures above 25 °C. Verify that the gate drive voltage aligns with the specified thresholds for optimal performance and minimal conduction losses.

Part Context

This part belongs to the Si7 series of dual N-channel MOSFETs. It shares the PowerPAK SO-8 package form factor with other Vishay Siliconix components but offers specific electrical characteristics tailored for 100 V applications. The dual configuration allows for efficient half-bridge or synchronous rectifier designs.