SI7252DP-T1-GE3

Overview

The Si7252DP-T1-GE3 is a dual N-channel 100 V (D-S) MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET power technology and is housed in a PowerPAK SO-8 Dual package. The device features a maximum drain-source voltage of 100 V and a continuous drain current of 36.7 A at TC = 25 °C. On-state resistance is specified as 0.018 Ω max at VGS = 10 V, 0.019 Ω max at VGS = 7.5 V, and 0.021 Ω max at VGS = 6 V. Typical gate charge is 12.2 nC at VDS = 50 V, VGS = 6 V, and ID = 10 A. Maximum power dissipation is 46 W at TC = 25 °C. Operating junction and storage temperature range spans from -55 to +150 °C.

Feature Summary

• Dual N-channel configuration with TrenchFET power MOSFET technology
• Lead-free and halogen-free construction compliant with material categorization standards
• 100% Rg and UIS tested for reliability

Applications

• Primary side switching
• Synchronous rectification
• DC/AC inverters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free status and packaging type. Confirm that the component meets RoHS and REACH requirements for the target market. Ensure the supplier provides traceability data consistent with Vishay manufacturing protocols. Validate datasheet revision numbers before finalizing procurement specifications.

Selection Notes

Select this component when a dual N-channel MOSFET with 100 V breakdown voltage is required in a compact surface-mount footprint. Evaluate thermal performance based on the application's ambient temperature and available copper area for heat dissipation. Consider the low on-resistance characteristics for efficiency in high-current synchronous rectification or inverter applications.

Part Context

This part belongs to the Vishay Siliconix PowerPAK SO-8 Dual series. It shares the standard SO-8 footprint while accommodating a larger die size similar to DPAK packages. This design allows for direct substitution in existing layouts while providing superior thermal performance compared to traditional leaded packages.

Replacement Considerations

Direct pin-compatible replacements within the same family include SI7252DV-T1-GE3. Verify electrical parameters and thermal characteristics carefully when substituting across different manufacturers or package types.

FAQ

What is the maximum junction-to-case thermal resistance?

The maximum junction-to-case (drain) thermal resistance is 2.7 °C/W under steady-state conditions.

Is the device suitable for avalanche operation?

Yes, the datasheet specifies single pulse avalanche current (IAS) of 20 A and single pulse avalanche energy (EAS) of 20 mJ.

What is the body diode reverse recovery time?

The typical body diode reverse recovery time (trr) is 39 ns at IF = 10 A, dI/dt = 100 A/μs, and TJ = 25 °C.