SI7272DP-T1-GE3

Overview

The Si7272DP-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and a maximum continuous drain current of 25 A at a case temperature of 25 °C. The device exhibits a typical on-state resistance of 9.3 mΩ at VGS = 10 V and 12.4 mΩ at VGS = 4.5 V. Total gate charge is typically 8.2 nC at VGS = 4.5 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a leadless PowerPAK SO-8 Dual package.

Feature Summary

• Dual N-channel configuration with independent gate control for each channel
• TrenchFET power MOSFET architecture optimized for PWM applications
• Leadless PowerPAK SO-8 Dual package providing enhanced thermal dissipation

Applications

• System power DC/DC conversion circuits
• PWM controlled power switching stages
• Low voltage synchronous rectification

Procurement Notes

Verify the component against official Vishay datasheet specifications before integration. Confirm that the PowerPAK SO-8 Dual land pattern matches the recommended layout guidelines to ensure proper thermal performance and solder joint reliability during assembly.

Selection Notes

Select this component for designs requiring two isolated N-channel switches in a compact footprint. Evaluate the thermal resistance characteristics relative to the PCB copper area, as the package relies heavily on board-level heat spreading for optimal junction-to-ambient performance under steady-state conditions.

Part Context

This part belongs to the Si7272 series of dual MOSFETs manufactured by Vishay Siliconix. It shares the PowerPAK SO-8 Dual form factor with other devices in the family but is distinguished by its specific 30 V breakdown voltage and low on-resistance characteristics tailored for high-efficiency power management.

Replacement Considerations

Direct pin-compatible replacements within the same package require matching dual N-channel topology and similar electrical ratings. Verify thermal resistance and gate charge parameters when substituting to maintain circuit stability and switching speed.

FAQ

What is the maximum junction temperature for the Si7272DP?

The maximum operating junction temperature is +150 °C.

How does the on-resistance vary with gate voltage?

The maximum on-resistance is 9.3 mΩ at VGS = 10 V and increases to 12.4 mΩ at VGS = 4.5 V.

Is the PowerPAK SO-8 Dual package compatible with standard SO-8 footprints?

Yes, the pin arrangement and dimensions match standard SO-8 devices, allowing direct substitution on existing layouts.