SI7288DP-T1-GE3

Overview

The SI7288DP-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET Gen III technology. It features a 40 V drain-source voltage rating and a continuous drain current of 20 A at TC = 25 °C. The maximum on-state resistance is 19 mΩ at VGS = 10 V and 22 mΩ at VGS = 4.5 V. Total gate charge is typically 10 nC at VGS = 10 V. The device operates within a junction temperature range of -55 °C to +150 °C and is housed in a leadless PowerPAK SO-8 package.

Feature Summary

• TrenchFET Gen III power MOSFET architecture optimized for PWM applications
• Dual configuration with independent channel control in a compact footprint
• Leadless PowerPAK SO-8 package providing enhanced thermal dissipation via exposed copper drain pad

Applications

• Backlight inverters for LCD displays
• DC/DC converter circuits

Procurement Notes

Verify the component against the official Vishay datasheet (Document Number: 65366) to confirm technical specifications. Ensure the ordering suffix matches the required lead-free and halogen-free compliance standards. Cross-reference the manufacturer part number with authorized distributors to validate authenticity before procurement.

Selection Notes

Select this component for designs requiring low on-resistance in a small surface-mount form factor. Evaluate the thermal performance based on the specific PCB copper area, as the PowerPAK SO-8 package relies heavily on board layout for heat dissipation. Confirm that the 40 V breakdown voltage meets the circuit requirements.

Part Context

This component belongs to the Vishay Siliconix Si7 series of dual N-channel MOSFETs. It utilizes the PowerPAK SO-8 package, which shares the same footprint and pin-out as standard SO-8 packages but offers superior thermal characteristics comparable to DPAK packages due to its larger die size and exposed drain pad.

Replacement Considerations

Direct substitution requires matching the dual N-channel configuration, 40 V VDS rating, and PowerPAK SO-8 package. Verify that any alternative device maintains equivalent RDS(on) values and thermal resistance characteristics to ensure proper circuit operation.