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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 5.4A PPAK 1212
- Series：-
- Mfr：Vishay Siliconix
- Package：Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel, Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.4A, 4.5A
- Rds On (Max) @ Id, Vgs：35mOhm @ 7.7A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.6W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The SI7501DN-T1-E3 is a complementary MOSFET array manufactured by Vishay Siliconix, integrating one N-channel and one P-channel enhancement-mode field-effect transistor within a single PowerPAK package. The device supports a drain-source voltage of 30 V for both channels. It provides a continuous drain current of 5.4 A. The component utilizes TrenchFET technology to achieve low on-resistance characteristics suitable for power management applications.
Feature Summary
- Integrates complementary N-channel and P-channel MOSFETs in a single compact surface-mount package
- Utilizes TrenchFET technology for optimized performance and low on-resistance
- Designed specifically for efficient power management circuit applications
Applications
- Power management circuits
- Battery protection systems
- Load switch implementations
Procurement Notes
Verify the specific manufacturer datasheet for the SI7501DN-T1-E3 to confirm all electrical parameters and mechanical dimensions. Ensure that the sourcing channel provides authentic components from Vishay or authorized distributors. Cross-reference the ordering suffix with official documentation to guarantee the correct tape-and-reel configuration and compliance status before finalizing procurement orders.
Selection Notes
Select this component when a dual-polarity switching solution is required in a minimal footprint. The integrated nature of the N/P pair simplifies board layout compared to discrete alternatives. Consider the 30 V rating and 5.4 A current capacity against the specific load requirements of the target application to ensure adequate headroom and thermal performance under operating conditions.
Part Context
This part belongs to the Vishay Siliconix lineup of complementary MOSFET arrays. These devices are engineered to replace discrete N-channel and P-channel pairs, reducing component count and assembly time. The PowerPAK packaging offers improved thermal dissipation and space efficiency compared to traditional leaded packages, making it suitable for dense consumer and industrial electronics designs.
Replacement Considerations
Consult official Vishay documentation for verified substitute part numbers. Do not assume functional equivalence with other models based solely on package similarity. Verify pinout compatibility and electrical specifications before implementing any alternative component in the design.
