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The SI7501DN-T1-GE3 is a complementary metal-oxide-semiconductor field-effect transistor (MOSFET) array manufactured by Vishay Siliconix. It integrates one N-channel and one P-channel enhancement-mode MOSFET within a single PowerPAK SO-8 surface-mount package. The device features a drain-source breakdown voltage of 30 V for both channels. The N-channel configuration supports a continuous drain current of 5.7 A, while the P-channel variant accommodates 7.6 A. Both transistors exhibit a maximum on-resistance of 17 mΩ at a gate-source voltage of 10 V. The unit operates reliably across a temperature range from -55 °C to +155 °C.
Verify component authenticity through authorized distribution channels. Confirm that the specific suffix matches the required tape-and-reel packaging format. Ensure compliance with RoHS directives and check for REACH SVHC status prior to integration into final assemblies.
Select this component when space-constrained designs require matched N-P channel characteristics. The 30 V rating suits low-voltage systems. Evaluate thermal dissipation requirements against the 1.4 W power dissipation limit. Consider the 17 mΩ resistance for minimizing conduction losses in high-current paths.
This part belongs to the Vishay Siliconix SI75 series of dual MOSFET arrays. These components are engineered to replace discrete transistor pairs, reducing board area and parasitic inductance. The complementary design simplifies schematic layout for half-bridge and synchronous buck topologies.
Public documentation indicates SI7501DN-GE3 as an alternative designation. Verify pin compatibility and electrical specifications before substitution.