SI7540ADP-T1-GE3

$2.11

Description：MOSFET N/P-CH 20V 12A PPAK SO8
Series：TrenchFET®

SKU:a015bd1d6b22 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 12A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：-
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：12A, 9A
Rds On (Max) @ Id, Vgs：28mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1310pF @ 10V
Power - Max：3.5W
Operating Temperature：-55°C ~ 150°C
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：-
Qualification：-

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SI7540ADP-T1-GE3

Overview

The Vishay Siliconix SI7540ADP-T1-GE3 is a dual N- and P-channel MOSFET in a PowerPAK SO-8 package. It features a 20 V drain-source voltage rating with typical on-resistances of 0.015 Ω (N-channel) and 0.028 Ω (P-channel) at ±4.5 V gate drive. Continuous drain currents reach 12 A for the N-channel and 9 A for the P-channel. The device utilizes TrenchFET technology, offering low gate charge (typical 8.5 nC for N-channel) and fast switching characteristics. It operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Dual configuration integrating complementary N- and P-channel transistors in a single leadless PowerPAK SO-8 package.
Thermally enhanced design utilizing exposed copper drain pads for efficient heat dissipation to the substrate.
TrenchFET power MOSFET architecture providing optimized on-resistance and switching performance.

Applications

DC/DC converters
Synchronous buck converter
Synchronous rectifier
Load switch
Motor drive switch

Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm the ordering suffix matches the required lead-free and halogen-free status. Ensure the supplier provides traceability documentation consistent with Vishay Siliconix manufacturing standards to guarantee reliability.

Selection Notes

Select this component for space-constrained designs requiring high current density in an SO-8 footprint. Evaluate thermal resistance requirements based on the specific PCB copper area available for heat spreading. Verify that the gate drive voltage meets the minimum threshold for optimal on-resistance performance under expected load conditions.

Part Context

This part belongs to the Vishay Siliconix TrenchFET family, designed to replace standard SO-8 packages while delivering DPAK-level thermal performance. The PowerPAK SO-8 form factor allows direct substitution on existing layouts without board redesign, facilitating compact power electronics development.