ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N/P-CH 12V 7.6A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：7.6A, 5.7A
- Rds On (Max) @ Id, Vgs：17mOhm @ 11.8A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
Download product information
Overview
The Vishay Siliconix SI7540DP-T1-E3 is a dual N- and P-channel MOSFET in a PowerPAK SO-8 package. It features a 12 V drain-source voltage rating with an on-state resistance of 0.017 Ω for the N-channel and 0.032 Ω for the P-channel at VGS = 4.5 V. Continuous drain currents reach 11.8 A (N-channel) and -8.9 A (P-channel). The device utilizes TrenchFET technology, operates within a junction temperature range of -55 °C to 150 °C, and includes halogen-free construction.
Feature Summary
- TrenchFET power MOSFET technology optimized for high efficiency PWM applications
- Low thermal resistance PowerPAK SO-8 package with a 1.07 mm profile
- Shoot-thru resistant design suitable for synchronous buck converters
Applications
- Point-of-load synchronous rectifier for 5 V or 3.3 V bus step-down
- Synchronous buck converter circuits
- Gate drive circuits requiring shoot-thru resistance
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status and ensure the lead-free designation matches the specific ordering suffix requirements for your manufacturing process.
Selection Notes
Evaluate thermal management requirements based on the specified junction-to-ambient resistance values. Ensure gate drive voltages align with the threshold characteristics for optimal switching performance. Verify that the continuous current ratings meet the peak load demands of the target application circuit.
Part Context
This component belongs to the Vishay Siliconix Si7540 series of low-voltage dual MOSFETs. It is designed as a complementary pair to facilitate compact power stage designs in space-constrained environments where efficient heat dissipation is critical.
Replacement Considerations
The Si7540DP-T1-GE3 is a verified alternative offering identical electrical characteristics with explicit halogen-free certification according to IEC 61249-2-21 standards.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150 °C.
Does this component support surface mount reflow soldering?
Yes, the device meets solder reflow reliability requirements with a recommended peak temperature of 260 °C.
What is the typical gate charge for the N-channel?
The typical total gate charge for the N-channel is 11.5 nC under standard test conditions.
