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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6.3A PPAK SO8
- Series：LITTLE FOOT®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.3A
- Rds On (Max) @ Id, Vgs：22mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The SI7842DP-T1-GE3 is a single N-channel Power MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAK-SO-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 25 A. At a gate-source voltage (Vgs) of 10 V, the maximum on-resistance (Rds(on)) is specified at 4.2 mΩ. The component supports a gate-source voltage range of ±20 V and operates within a temperature range from -55 °C to +150 °C junction temperature.
Feature Summary
- Utilizes TrenchFET technology for optimized performance characteristics.
Applications
- DC-DC converters
- Power switching applications
- Load switches
Procurement Notes
Verify the specific part number against official manufacturer documentation to ensure accuracy. Confirm that the ordering suffix corresponds to the intended reel packaging configuration. Cross-reference datasheet parameters with design requirements before procurement.
Selection Notes
Select this component based on its 30 V rating and low on-resistance suitable for efficient power management. Ensure the thermal design accommodates the specified power dissipation limits within the operating temperature range. Verify compatibility with the target PCB footprint for the PowerPAK-SO-8 package.
Part Context
This component belongs to the SI78 series of N-channel MOSFETs from Vishay Siliconix. The series is characterized by the use of advanced TrenchFET process technology, designed to provide high current handling capabilities in compact surface-mount packages for modern electronic systems.
Replacement Considerations
Consult official substitution guides or cross-reference tools provided by Vishay for verified alternative part numbers. Do not assume functional equivalence with other models without verifying electrical specifications and pinout configurations.
