SI7844DP-T1-E3

Overview

The Si7844DP-T1-E3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 6.4 A at 25 °C. The on-state resistance (RDS(on)) is specified at 0.022 Ω with VGS = 10 V and 0.030 Ω with VGS = 4.5 V. The device operates within a junction temperature range of -55 to +150 °C and is housed in a leadless PowerPAK SO-8 package.

Feature Summary

• Dual N-channel configuration with integrated body diodes
• TrenchFET power MOSFET technology for low on-resistance
• Leadless PowerPAK SO-8 surface mount package

Applications

• General purpose power switching applications
• Low voltage DC-DC converter circuits
• Load switch implementations

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. The E3 suffix indicates lead-free composition, while GE3 denotes both lead-free and halogen-free status. Confirm RoHS Directive 2002/95/EC compliance through manufacturer datasheets before finalizing procurement specifications.

Selection Notes

Select this component based on its 30 V rating and dual channel architecture. Evaluate thermal performance using the provided junction-to-ambient resistance values. Ensure gate drive voltages align with the specified RDS(on) conditions at 10 V or 4.5 V for optimal conduction characteristics.

Part Context

This part belongs to the Vishay Siliconix Si78xx series of dual N-channel MOSFETs. It shares the PowerPAK SO-8 footprint with other devices in the family but differs in voltage ratings and current handling capabilities. The dual configuration allows for compact designs requiring two independent switching elements.

Replacement Considerations

Direct replacements must match the 30 V rating, dual N-channel topology, and PowerPAK SO-8 package. Verify that alternative components meet the required RDS(on) and thermal resistance specifications to ensure equivalent circuit performance.