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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6.4A PPAK SO8
- Series：-
- Mfr：Vishay Siliconix
- Package：Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.4A
- Rds On (Max) @ Id, Vgs：22mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix Si7844DP-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a maximum continuous drain current of 6.4 A at 25 °C, with an on-state resistance of 0.022 Ω at VGS = 10 V and 0.030 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8 surface-mount configuration, it includes two independent channels with shared drain terminals.
Feature Summary
- Dual N-channel architecture with integrated body diodes
- Leadless PowerPAK SO-8 package for efficient thermal dissipation
- Halogen-free construction compliant with IEC 61249-2-21 standards
Applications
- DC-DC converter circuits
- Power management modules
- Load switching applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. Confirm that the component matches the intended RoHS and halogen-free specifications required by the target application before finalizing procurement decisions.
Selection Notes
Evaluate the thermal resistance characteristics relative to the expected ambient temperature and power dissipation levels. Ensure the gate drive voltage aligns with the specified thresholds to achieve the desired on-state resistance and current handling capabilities.
Part Context
This component belongs to the Vishay Siliconix family of TrenchFET power MOSFETs. It utilizes advanced silicon technology to deliver low on-resistance and high efficiency in a compact surface-mount footprint suitable for modern electronic designs.
Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameters before implementing any alternative components in existing designs.
