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The Vishay Siliconix SI7872DP-T1-GE3 is a dual N-channel MOSFET with an integrated Schottky diode, housed in a leadless PowerPAK SO-8 package. It features a 30 V drain-source voltage rating and a typical on-resistance of 0.022 Ω at VGS = 10 V. The device supports a continuous drain current of 10 A per channel and includes a 3.0 A Schottky diode with a forward voltage of 0.50 V. Operating junction temperatures range from -55 °C to +150 °C, with a maximum power dissipation of 3.5 W for the MOSFETs and 1.4 W for the diode.
Verify component authenticity by cross-referencing the manufacturer part number (SI7872DP-T1-GE3) and datasheet document number (72035). Confirm RoHS compliance status and check for specific ordering suffixes that may indicate halogen-free options or alternative packaging configurations before finalizing procurement.
Select this component for designs requiring a combined synchronous rectification and freewheeling solution in a minimal footprint. Ensure the application operates within the specified 30 V drain-source voltage limit and verify that the required gate drive voltage aligns with the specified RDS(on) thresholds for optimal efficiency.
This component belongs to the Vishay Siliconix LITTLE FOOT Plus series, designed for high-density surface-mount applications. It utilizes advanced TrenchFET technology to minimize on-state resistance while maintaining fast switching speeds suitable for modern power management architectures.
Consult official Vishay documentation for verified direct replacements. Evaluate alternative packages only if pin compatibility and thermal characteristics match the original specifications.
Each channel supports a continuous drain current of 10 A at TJ = 150 °C.
Yes, it integrates a dedicated Schottky diode with a 3.0 A forward current rating and a 0.50 V forward voltage drop.
The operating junction and storage temperature range is -55 °C to +150 °C.