SI7872DP-T1-GE3

SI7872DP-T1-GE3

$1.75
  • Description:MOSFET 2N-CH 30V 6.4A PPAK SO8
  • Series:LITTLE FOOT®

SKU:27ba9099ca25 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 6.4A PPAK SO8
  • Series:LITTLE FOOT®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6.4A
  • Rds On (Max) @ Id, Vgs:22mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1.4W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® SO-8 Dual
  • Supplier Device Package:PowerPAK® SO-8 Dual
  • Grade:-
  • Qualification:-

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SI7872DP-T1-GE3

Overview

The Vishay Siliconix SI7872DP-T1-GE3 is a dual N-channel MOSFET with an integrated Schottky diode, housed in a leadless PowerPAK SO-8 package. It features a 30 V drain-source voltage rating and a typical on-resistance of 0.022 Ω at VGS = 10 V. The device supports a continuous drain current of 10 A per channel and includes a 3.0 A Schottky diode with a forward voltage of 0.50 V. Operating junction temperatures range from -55 °C to +150 °C, with a maximum power dissipation of 3.5 W for the MOSFETs and 1.4 W for the diode.

Feature Summary

  • Integrates two N-channel MOSFETs and one Schottky diode within a single LITTLE FOOT Plus PowerPAK SO-8 package.
  • Optimized for PWM applications with low thermal resistance and a compact 1.07 mm profile.
  • Features TrenchFET technology for enhanced switching performance and low conduction losses.

Applications

  • Asymmetrical Buck-Boost DC/DC Converters
  • PWM Optimized Power Supply Circuits

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number (SI7872DP-T1-GE3) and datasheet document number (72035). Confirm RoHS compliance status and check for specific ordering suffixes that may indicate halogen-free options or alternative packaging configurations before finalizing procurement.

Selection Notes

Select this component for designs requiring a combined synchronous rectification and freewheeling solution in a minimal footprint. Ensure the application operates within the specified 30 V drain-source voltage limit and verify that the required gate drive voltage aligns with the specified RDS(on) thresholds for optimal efficiency.

Part Context

This component belongs to the Vishay Siliconix LITTLE FOOT Plus series, designed for high-density surface-mount applications. It utilizes advanced TrenchFET technology to minimize on-state resistance while maintaining fast switching speeds suitable for modern power management architectures.

Replacement Considerations

Consult official Vishay documentation for verified direct replacements. Evaluate alternative packages only if pin compatibility and thermal characteristics match the original specifications.

FAQ

What is the maximum continuous drain current for each channel?

Each channel supports a continuous drain current of 10 A at TJ = 150 °C.

Does the device include a built-in body diode?

Yes, it integrates a dedicated Schottky diode with a 3.0 A forward current rating and a 0.50 V forward voltage drop.

What is the recommended operating temperature range?

The operating junction and storage temperature range is -55 °C to +150 °C.

SI7872DP-T1-GE3SI7872DP-T1-GE3
$1.75
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