SI7880ADP-T1-GE3

$1.58

Description：MOSFET N-CH 30V 40A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:1041f622310f Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI7880ADP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 40A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI7880ADP-T1-GE3

Description：MOSFET N-CH 30V 40A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：125 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5600 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：5.4W (Ta), 83W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SI7880ADP-T1-GE3

SI7880ADP-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI7880ADP-T1-GE3 is a single N-channel PowerMOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and a maximum on-resistance of 0.003 Ω at VGS = 10 V. The device supports a continuous drain current of 40 A at TC = 25 °C. It is housed in a leadless PowerPAK SO-8 package with a low profile of 1.07 mm, providing a junction-to-case thermal resistance of 1.0 °C/W.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture optimized for PWM applications
Low thermal resistance PowerPAK SO-8 package with exposed copper drain pad
100% Rg tested to ensure gate reliability

Single FETs, MOSFETs Applications

Low side MOSFET in synchronous buck converters for desktops
Secondary synchronous rectifier circuits
DC/DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm compliance status. The GE3 suffix indicates lead-free and halogen-free construction. Confirm that the component matches the required PowerPAK SO-8 footprint and pinout configuration for your PCB layout. Ensure the datasheet revision aligns with your design specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a low-profile surface-mount solution is required for high-current switching applications. The PowerPAK SO-8 package allows for direct substitution into standard SO-8 land patterns while offering superior thermal performance compared to traditional leaded packages. Evaluate the junction-to-ambient thermal resistance based on your specific board copper area and layer stack-up requirements.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SI7 series of N-channel MOSFETs. It utilizes the PowerPAK SO-8 package, which shares the same footprint as the standard SO-8 but accommodates a larger die size similar to DPAK packages. This design enables higher current handling capabilities within a compact form factor suitable for space-constrained electronic designs.