SI7901EDN-T1-E3

Overview

The SI7901EDN-T1-E3 is a dual P-Channel Power MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAK-1212-8 surface-mount package. The device features a drain-source voltage (Vds) of -20V and a gate-source voltage (Vgs) rating of -8V. Designed for high-efficiency switching applications, it integrates two independent channels within a compact footprint to minimize board space and parasitic inductance.

Feature Summary

• Dual-channel integration reduces component count and PCB area
• TrenchFET technology ensures low on-resistance and fast switching
• PowerPAK-1212-8 package provides enhanced thermal performance

Applications

• Load switch circuits in portable electronics
• Power management modules for consumer devices
• Battery protection and control boards

Procurement Notes

Verify the specific suffix configuration against official datasheets, as ordering codes may vary between distributors. Confirm RoHS compliance status directly with the manufacturer or authorized suppliers. Check for obsolescence notices, as availability may be restricted. Ensure the source document matches the exact part number to avoid substitution errors during procurement.

Selection Notes

Select this component when dual P-Channel switching is required in a minimal footprint. Compare on-resistance and thermal resistance values against system requirements. Verify that the -20V Vds rating meets the circuit's maximum voltage stress. Consider the PowerPAK-1212-8 package dimensions for layout compatibility.

Part Context

This part belongs to the SI7 series of power MOSFETs from Vishay Siliconix. It is designed for general-purpose switching applications where space efficiency and thermal performance are critical. The dual-channel configuration allows for synchronized control of multiple loads or phases in compact designs.

Replacement Considerations

SI7901EDN-GE3 is listed as an alias for this part number.