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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 6A PPAK 1212
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：30mOhm @ 7.1A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：860pF @ 10V
- Power - Max：17.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The Si7904BDN-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a PowerPAK 1212-8 package with a drain-source voltage (VDS) of 20 V and a continuous drain current (ID) of 6 A at TC = 25 °C. The maximum on-state resistance (RDS(on)) is 30 mΩ at VGS = 4.5 V, 36 mΩ at VGS = 2.5 V, and 45 mΩ at VGS = 1.8 V. The gate threshold voltage (VGS(th)) ranges from 0.45 V to 1 V. Total gate charge (Qg) is typically 9 nC at VGS = 4.5 V. Operating junction temperature spans -55 °C to +150 °C, with a maximum power dissipation of 17.8 W at TC = 25 °C.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs within a single compact leadless package.
Applications
- HDD spindle drive
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance attributes. The GE3 suffix indicates lead-free and halogen-free status according to manufacturer specifications. Ensure component authenticity through authorized distribution channels and validate datasheet revision alignment for design integration.
Selection Notes
Select this component for applications requiring low-voltage switching in space-constrained environments. Evaluate thermal management requirements based on the specified junction-to-case resistance. Confirm that the required gate drive voltage aligns with the RDS(on) performance curves provided in the technical specifications.
Part Context
This device belongs to the Si7904BDN series manufactured by Vishay / Siliconix. It utilizes the PowerPAK 1212-8 package, which provides enhanced thermal performance relative to standard surface-mount packages while maintaining a small footprint comparable to TSOP-6.
Replacement Considerations
Direct functional substitutes are not explicitly listed in the provided documentation. Verify pinout compatibility and electrical parameters when considering alternative dual N-channel MOSFETs in the PowerPAK 1212-8 package.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum gate-source voltage (VGS) is ±8 V.
How does the package affect thermal performance?
The PowerPAK 1212-8 package offers a maximum junction-to-case thermal resistance (RthJC) of 7 °C/W, providing superior heat dissipation compared to standard SO-8 or TSSOP-8 packages.
Is the device suitable for high-temperature operation?
Yes, the operating junction and storage temperature range extends up to +150 °C.
