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Product Detailed Parameters
- Description：MOSFET 2P-CH 40V 6A PPAK 1212
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：60mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：880pF @ 20V
- Power - Max：20.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7905DN-T1-E3 is a dual P-Channel MOSFET featuring TrenchFET technology and rated for a drain-source voltage of -40 V. It utilizes the PowerPAK 1212-8 surface-mount package with a maximum profile of 1.12 mm. The device specifies an on-state resistance of 0.060 Ω at VGS = -10 V and 0.089 Ω at VGS = -4.5 V. Continuous drain current reaches -6 A at TC = 25 °C, while pulsed drain current supports up to -20 A. Total gate charge is typically 20 nC at VGS = -10 V. Operating junction temperature ranges from -55 °C to +150 °C.
Feature Summary
- Dual P-Channel configuration utilizing TrenchFET power MOSFET technology
- Low thermal resistance PowerPAK 1212-8 leadless package design
- Halogen-free construction compliant with IEC 61249-2-21 definition
Applications
- Load Switch applications
- Space-constrained circuit designs requiring low profile components
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number against official Vishay documentation. Confirm RoHS compliance status and ensure the specific ordering suffix matches project requirements. Validate datasheet revision dates prior to integration into final designs.
Selection Notes
Evaluate thermal management requirements based on the specified junction-to-case and junction-to-ambient thermal resistance values. Ensure gate drive voltages align with the threshold characteristics for optimal RDS(on) performance. Verify PCB land pattern dimensions match the PowerPAK 1212-8 footprint specifications.
Part Context
This component belongs to the Vishay Siliconix discrete semiconductor product line. It is manufactured using silicon technology and falls under the category of metal oxide semiconductor field-effect transistors designed for general-purpose switching applications.
Replacement Considerations
Consult official Vishay documentation for recommended alternate part numbers. Verify pinout compatibility and electrical parameter equivalence before substituting existing inventory or design configurations.
