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Product Detailed Parameters
- Description：MOSFET 2P-CH 12V 5.3A PPAK 1212
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：5.3A
- Rds On (Max) @ Id, Vgs：37mOhm @ 7.7A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs：24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The SI7909DN-T1-E3 is a dual P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a silicon construction and is housed in a compact surface-mount package suitable for automated assembly. The device is designed for efficient power switching applications requiring low on-resistance and fast switching speeds. It operates within a standard commercial temperature range and complies with RoHS directives for environmental safety.
Feature Summary
- Dual P-Channel Configuration
- TrenchFET Technology
- Surface Mount Package
Applications
- Load Switching Circuits
- Power Management Modules
- DC-DC Converter Output Stages
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm lot traceability and RoHS compliance documentation prior to integration. Check for obsolescence status as availability may be limited. Ensure storage conditions meet semiconductor handling standards to prevent moisture sensitivity issues during reflow soldering processes.
Selection Notes
Evaluate thermal performance requirements against the specified power dissipation limits. Verify gate drive voltage compatibility with the logic-level threshold characteristics. Consider footprint constraints when selecting alternative packages within the same series. Assess current carrying capacity relative to peak load demands in the target application circuit design.
Part Context
This component belongs to the SI7 series of discrete power MOSFETs from Vishay Siliconix. The series focuses on high-density packaging solutions for modern electronics. Dual configurations allow for space-saving designs in bridge drivers and synchronous rectification topologies. The TrenchFET platform provides improved efficiency compared to planar technologies.
