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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4.2A PPAK 1212
- Series：-
- Mfr：Vishay Siliconix
- Package：Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.2A
- Rds On (Max) @ Id, Vgs：51mOhm @ 5.7A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.3W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The SI7911DN-T1-E3 is a dual N-channel PowerTrench MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds. The device is housed in a compact PowerPAK 1212-8 surface-mount package, designed for high-density PCB layouts. Key electrical characteristics include a drain-source voltage rating of 60V and a continuous drain current capability suitable for various power management applications. The component operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- Dual N-channel configuration integrated into a single compact package
- Low on-resistance achieved through advanced TrenchFET process technology
- Fast switching performance with minimal gate charge requirements
- Enhanced thermal efficiency via the PowerPAK 1212-8 leadless package design
Applications
- DC-DC converter synchronous rectification stages
- Load switch circuits in portable electronic devices
- Power management modules for automotive control units
- Battery protection and isolation circuits
Procurement Notes
Verify the specific suffix E3 confirms RoHS compliance and halogen-free status as per Vishay standards. Confirm the T1 designation indicates reel packaging if required for automated assembly. Check current lifecycle status as distribution availability may vary due to production updates or obsolescence notices from the manufacturer.
Selection Notes
Select this component when space constraints require a dual MOSFET solution in a small footprint. Ensure the 60V breakdown voltage meets the circuit's maximum operating voltage with adequate margin. Verify that the thermal resistance of the PowerPAK 1212-8 package aligns with the expected power dissipation and board copper area for effective heat spreading.
Part Context
This part belongs to the Vishay Siliconix PowerTrench family, known for optimizing on-resistance and gate charge. The SI79xx series specifically targets dual-channel applications, reducing component count compared to discrete single MOSFETs. It serves as a direct replacement for older dual MOSFET designs requiring similar voltage ratings and package dimensions.
Replacement Considerations
Consult official Vishay cross-reference documents for verified alternatives. Potential substitutes must match the 60V Vds, dual N-channel topology, and PowerPAK 1212-8 package. Verify pinout compatibility and thermal characteristics before substitution.
