SI7913DN-T1-E3

Overview

The Si7913DN-T1-E3 is a dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a PowerPAK 1212-8 surface-mount package with a drain-source voltage rating of -20 V. The device provides two independent channels within the compact footprint. On-state resistance is specified at 0.037 Ω at VGS = -4.5 V and ID = -7.4 A, or 0.066 Ω at VGS = -1.8 V and ID = -1.5 A. Continuous drain current reaches -7.4 A at TA = 25 °C. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual channel configuration in a single leadless PowerPAK 1212-8 package
• TrenchFET power MOSFET technology for low on-resistance
• Exposed thermal pad design for efficient heat dissipation

Applications

• Portable PA switch circuits
• Battery management switches
• General load switching applications

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific halogen-free variants if required by project specifications. Ensure ordering suffixes match exact packaging requirements. Validate datasheet revision against received documentation to confirm technical parameters.

Selection Notes

Evaluate thermal performance based on PCB copper area and layer stack configuration. Verify gate drive voltage levels against specified RDS(on) conditions to ensure adequate current handling. Consider the exposed copper terminal during soldering process planning. Assess maximum power dissipation limits relative to ambient operating temperatures.

Part Context

This component belongs to the Vishay Siliconix Si79xx series of dual P-channel MOSFETs. It shares the PowerPAK 1212-8 package form factor with other devices in the family, offering a footprint comparable to TSOP-6 while providing superior thermal characteristics compared to standard SO-8 packages.

Replacement Considerations

Si7913DN-T1-GE3 (Lead-free and Halogen-free variant)