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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 5A PPAK 1212
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5A
- Rds On (Max) @ Id, Vgs：37mOhm @ 7.4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7913DN-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology. It features a PowerPAK 1212-8 surface-mount package with a drain-source voltage (VDS) of -20 V. The device provides a continuous drain current (ID) of -7.4 A at TA = 25 °C and -5.0 A at TA = 85 °C. The on-state resistance (RDS(on)) is specified as 0.037 Ω at VGS = -4.5 V, 0.048 Ω at VGS = -2.5 V, and 0.066 Ω at VGS = -1.8 V. Gate threshold voltage (VGS(th)) ranges from -0.40 V to -1.0 V. Total gate charge (Qg) is typically 24 nC at VDS = -10 V and VGS = -4.5 V. Maximum power dissipation is 2.8 W at TA = 25 °C. Operating junction temperature spans -55 °C to +150 °C.
Feature Summary
- Dual P-channel configuration in a compact leadless PowerPAK 1212-8 package
- TrenchFET technology for low thermal resistance and high efficiency
- Halogen-free construction compliant with IEC 61249-2-21
Applications
- Portable PA switch circuits
- Battery management switches
- General load switching applications
Procurement Notes
Verify the complete part number including the suffix to confirm halogen-free status. The GE3 suffix indicates lead-free and halogen-free compliance. Confirm the specific datasheet revision matches the design requirements. Ensure the ordering quantity aligns with standard reel packaging specifications provided by the manufacturer.
Selection Notes
Select this component for space-constrained designs requiring dual P-channel switching. Evaluate the RDS(on) values against the intended gate drive voltage to ensure adequate current handling. Consider the thermal resistance ratings when designing the PCB copper area for heat dissipation. Verify that the operating voltage does not exceed the absolute maximum ratings.
Part Context
This component belongs to the Vishay Siliconix Si7913 series of dual P-channel MOSFETs. It utilizes the PowerPAK 1212-8 package, which offers a footprint over 40% smaller than standard TSSOP-8 packages while maintaining superior thermal performance. The series is designed for portable electronics where size and thermal efficiency are critical constraints.
Replacement Considerations
The Si7913DN-T1-E3 is the lead-free equivalent without the halogen-free designation. Cross-referencing requires verifying pin compatibility and electrical parameters such as RDS(on) and VGS(th). Package dimensions must be confirmed to ensure mechanical fit within the existing layout.
