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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 1.8A PPAK 1212
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：1.8A
- Rds On (Max) @ Id, Vgs：195mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix Si7922DN-T1-GE3 is a dual N-channel MOSFET featuring TrenchFET technology and rated for a drain-source voltage of 100 V. It utilizes the PowerPAK 1212-8 surface-mount package, which provides thermal performance comparable to an SO-8 while occupying one-third of the space. The device offers a maximum on-state resistance of 0.195 Ω at VGS = 10 V with a continuous drain current of 2.5 A. Key dynamic parameters include a total gate charge of 8 nC, turn-on delay time of 71 ns, and rise time of 11 ns. Thermal ratings specify a junction-to-case resistance of 4.3 °C/W and a junction-to-ambient resistance of 77 °C/W.
Feature Summary
- Dual N-channel configuration utilizing TrenchFET power MOSFET technology
- PowerPAK 1212-8 leadless package providing reduced footprint with high thermal efficiency
- Optimized switching characteristics suitable for PWM applications
Applications
- DC/DC primary-side switch
- 48 V battery monitoring systems
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer's part marking against official datasheet documentation. Confirm compliance status through RoHS and REACH declarations provided in the product specification sheet. Ensure ordering suffixes match required halogen-free or lead-free specifications as defined by the manufacturer.
Selection Notes
Select this component for designs requiring compact dual-channel switching solutions where board space is limited but thermal management remains critical. Evaluate the 100 V breakdown voltage and low on-resistance against circuit load requirements. Consider the specific thermal impedance characteristics of the PowerPAK 1212-8 package during PCB layout planning.
Part Context
This component belongs to the Vishay Siliconix Si79xx series of dual MOSFETs. It shares the PowerPAK 1212-8 packaging format found across various Vishay voltage ratings. The series emphasizes miniaturization without sacrificing the thermal dissipation capabilities typically associated with larger standard outline packages.
Replacement Considerations
Direct replacements must maintain the dual N-channel topology, 100 V rating, and PowerPAK 1212-8 footprint. Verify pinout compatibility and thermal resistance values before substitution.
