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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 4.3A PPAK 1212
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.3A
- Rds On (Max) @ Id, Vgs：47mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7923DN-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology. It features a PowerPAK 1212-8 package with a drain-source voltage (VDS) of -30 V and a continuous drain current (ID) of -6.4 A at 25 °C. The on-state resistance (RDS(on)) is specified as 0.047 Ω at VGS = -10 V and 0.075 Ω at VGS = -4.5 V. The device operates within a junction temperature range of -55 °C to +150 °C, with a maximum power dissipation of 2.8 W at 25 °C.
Feature Summary
- Dual P-channel configuration in a compact leadless PowerPAK 1212-8 surface-mount package
- TrenchFET technology providing low thermal resistance for efficient heat dissipation
- Logic-level gate drive capability allowing operation at VGS = -4.5 V
Applications
- Portable battery switch circuits
- Load switching applications
Procurement Notes
Verify the specific ordering suffix when sourcing components. The GE3 designation indicates the part is both lead-free and halogen-free according to IEC 61249-2-21 standards. Confirm that the required version matches the environmental compliance specifications needed for the target assembly process.
Selection Notes
Select this component for designs requiring dual P-channel switching in space-constrained environments. The PowerPAK 1212-8 package offers significantly lower thermal impedance compared to standard SO-8 or TSSOP-8 packages. Ensure the PCB layout includes adequate copper spreading on the drain pads to maximize thermal performance and maintain low junction temperatures.
Part Context
This component belongs to the Si7923 series of Vishay Siliconix dual P-channel MOSFETs. It is manufactured using silicon technology and utilizes the TrenchFET power MOSFET architecture. The product is available in reel, cut tape, and MouseReel packaging formats for surface mount technology applications.
Replacement Considerations
The Si7923DN-T1-E3 is the lead-free equivalent of this component. Verify pinout compatibility and electrical parameters before substituting other dual P-channel MOSFETs from different manufacturers.
