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Product Detailed Parameters
- Description：MOSFET 2P-CH 12V 4.8A PPAK 1212
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：4.8A
- Rds On (Max) @ Id, Vgs：42mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The SI7925DN-T1-GE3 is a dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 12V drain-source voltage and a continuous drain current of 4.8A. The device is housed in a PowerPAK 1212-8 surface-mount package. Key electrical parameters include a maximum power dissipation of 1.3W and an on-resistance specified at low gate drive levels. It operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- Dual P-channel configuration for efficient power switching applications
- TrenchFET technology for optimized performance
- Compact leadless PowerPAK 1212-8 surface mount package
Applications
- Power management circuits requiring dual P-channel switching
- Low voltage DC/DC converter topologies
- Battery protection and load switch designs
Procurement Notes
Verify component status as the SI7925DN-T1-GE3 is listed as obsolete or recommended alternative in major distributor catalogs. Confirm availability through authorized channels or identify suitable replacement parts from the same manufacturer family if current stock is unavailable. Ensure datasheet revisions match design requirements before procurement.
Selection Notes
Select this component for low-voltage applications requiring dual P-channel isolation in a small footprint. Consider the 12V rating and 4.8A current limit against system demands. Evaluate thermal performance given the 1.3W dissipation limit in the PowerPAK 1212-8 package. Verify compatibility with control logic voltages and ensure adequate PCB copper area for heat dissipation.
Part Context
This part belongs to the Vishay Siliconix TrenchFET series, designed for high-efficiency power switching. The PowerPAK 1212-8 package provides a compact solution for space-constrained designs. As a dual P-channel device, it simplifies circuit topology compared to using discrete single-channel MOSFETs for similar functions.
Replacement Considerations
Distributors list SI7911DN-T1-GE3 as a recommended alternative. Verify pinout compatibility and electrical specifications before substitution. Check for any functional differences in threshold voltage or on-resistance that may impact circuit performance.
