SI7942DP-T1-E3

$3.32

Description：MOSFET 2N-CH 100V 3.8A PPAK SO8
Series：TrenchFET®

SKU:ae759e6c217d Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 3.8A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：3.8A
Rds On (Max) @ Id, Vgs：49mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：-
Qualification：-

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SI7942DP-T1-E3

Overview

The Vishay Siliconix Si7942DP-T1-E3 is a dual N-channel MOSFET with a drain-source voltage rating of 100 V. It utilizes TrenchFET technology and is housed in a PowerPAK SO-8 package. The device features a maximum on-state resistance of 0.049 Ω at VGS = 10 V and 5.9 A, or 0.060 Ω at VGS = 6 V and 5.5 A. Continuous drain current is rated at 5.9 A at TA = 25 °C and 3.8 A at TJ = 150 °C. Gate-source voltage is ± 20 V, and the operating junction temperature range spans from -55 °C to +150 °C.

Feature Summary

Dual configuration for space savings
TrenchFET power MOSFET technology
Low thermal resistance PowerPAK package

Applications

Synchronous buck shoot-through resistant circuits
Primary side switch applications

Procurement Notes

Verify the specific ordering suffix when sourcing components. The Si7942DP-T1-E3 designation indicates a lead-free product. Confirm whether halogen-free compliance is required, as this corresponds to the Si7942DP-T1-GE3 variant. Ensure that the selected part matches the exact electrical and environmental specifications needed for the design.

Selection Notes

Select this component based on the requirement for a dual N-channel MOSFET with a 100 V breakdown voltage. Evaluate the thermal performance requirements against the specified junction-to-ambient and junction-to-case thermal resistances. Consider the gate drive voltage levels, as the on-resistance varies significantly between 6 V and 10 V gate-source voltages.

Part Context

The Si7942DP belongs to the Vishay Siliconix TrenchFET family of power MOSFETs. It is manufactured using silicon technology and is designed for surface mount applications. The device is available in a lead-free version (Si7942DP-T1-E3) and a lead-free, halogen-free version (Si7942DP-T1-GE3).