SI7946ADP-T1-GE3

Overview

The SI7946ADP-T1-GE3 is a dual N-channel MOSFET utilizing Vishay's ThunderFET technology, housed in a leadless PowerPAK SO-8 package. It features a drain-source voltage (VDS) of 150 V and a continuous drain current (ID) of 7.7 A at TC = 25 °C. The maximum on-state resistance (RDS(on)) is 0.186 Ω at VGS = 10 V and 0.256 Ω at VGS = 6 V. Total gate charge (Qg) is typically 5.3 nC at VGS = 10 V. The device supports an operating junction temperature range from -55 °C to +150 °C with a maximum power dissipation of 19.8 W at TC = 25 °C.

Feature Summary

• ThunderFET technology optimizes the balance between RDS(on), total gate charge, switching charge, and output charge.
• Dual configuration integrates two independent N-channel MOSFETs within a single compact footprint.
• Leadless PowerPAK SO-8 package provides enhanced thermal performance compared to standard SO-8 packages.

Applications

• DC/DC converters
• Boost converters
• Primary side switch applications
• Synchronous rectification circuits
• Power-over-Ethernet systems

Procurement Notes

Verify component authenticity by checking for the Vishay Siliconix trademark and specific part marking codes on the package surface. Confirm RoHS compliance status through official documentation as required by project specifications. Ensure the ordering suffix matches the lead-free and halogen-free requirement indicated in the datasheet. Validate that the received components match the specified PowerPAK SO-8 dual package dimensions.

Selection Notes

Select this component when a dual N-channel configuration with high voltage ratings is required in a space-constrained design. The low gate charge facilitates efficient driving in high-frequency switching applications. Evaluate thermal management requirements based on the junction-to-case thermal resistance and ensure adequate copper area on the PCB to maximize heat dissipation capabilities.

Part Context

This component belongs to the SI7 series of Vishay Siliconix MOSFETs, which utilize TrenchFET technology. The SI7946ADP specifically employs ThunderFET optimization to improve efficiency metrics. It is designed for surface-mount assembly, offering a direct footprint replacement for standard SO-8 dual packages while providing superior thermal characteristics due to its exposed drain pad construction.

Replacement Considerations

Direct pin-compatible replacements include other Vishay dual N-channel MOSFETs in the PowerPAK SO-8 package, such as the SI7944 or SI7948, provided their electrical parameters meet the application requirements. Verify that any substitute maintains the same 150 V rating and compatible gate threshold voltages.