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Product Detailed Parameters
- Description：MOSFET 2P-CH 60V 3.2A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3.2A
- Rds On (Max) @ Id, Vgs：64mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7949DP-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology. It features a PowerPAK SO-8 package with a maximum drain-source voltage (VDS) of -60 V and a continuous drain current (ID) of -5 A at 25 °C. The on-state resistance (RDS(on)) is typically 0.064 Ω at VGS = -10 V and -5 A, rising to 0.080 Ω at VGS = -4.5 V and -4.5 A. Total gate charge (Qg) is typically 26 nC. The device operates within a junction temperature range of -55 °C to +150 °C and offers a maximum junction-to-case thermal resistance of 4.3 °C/W.
Feature Summary
- Dual P-channel configuration in a leadless PowerPAK SO-8 package
- TrenchFET technology for low on-resistance and fast switching
- Halogen-free construction compliant with IEC 61249-2-21
Applications
- Power management circuits requiring dual high-side or low-side switching
- DC-DC converter topologies utilizing complementary channel pairs
- Motor control applications involving H-bridge configurations
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance requirements. The GE3 suffix indicates lead-free and halogen-free status according to IEC 61249-2-21. Confirm that the component meets RoHS directives before finalizing procurement specifications for your assembly process.
Selection Notes
Select this component when a compact dual P-channel solution is required for 60 V systems. Evaluate the thermal performance based on the PCB copper area, as the PowerPAK SO-8 relies heavily on board-level heat spreading. Ensure the gate drive voltage supports the specified RDS(on) thresholds for optimal efficiency.
Part Context
This part belongs to the Vishay Siliconix Si7 series of power MOSFETs. It utilizes the PowerPAK SO-8 footprint, which provides thermal performance comparable to larger DPAK packages while maintaining the small outline dimensions of a standard SO-8. This allows for direct substitution in designs previously using standard SO-8 packages without layout changes.
Replacement Considerations
Direct pin-compatible replacements within the same package family include the SI7949DP-T1-E3. Verify electrical parameters such as RDS(on) and VDS ratings match the original design requirements before substituting.
