SI7960DP-T1-GE3

Overview

The Vishay Siliconix SI7960DP-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a PowerPAK SO-8 surface-mount package with a drain-source voltage (VDS) of 60 V and a gate-source voltage (VGS) of ±20 V. At TA = 25 °C, the continuous drain current (ID) is 9.7 A per channel, while the pulsed drain current (IDM) reaches 40 A. The on-state resistance (RDS(on)) is specified at 0.021 Ω at VGS = 10 V and 0.025 Ω at VGS = 4.5 V. Total gate charge (Qg) is typically 49 nC. The device operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

• Dual configuration for space savings
• TrenchFET power MOSFET technology
• Low thermal resistance PowerPAK SO-8 package

Applications

• Power management circuits requiring compact dual-channel solutions
• DC-DC converter designs
• Load switching applications

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part marking against official datasheet documentation. Confirm compliance requirements such as RoHS and REACH status directly from the supplier or manufacturer before procurement. Ensure that the specific ordering suffix matches the required halogen-free specifications.

Selection Notes

Select this component when a dual N-channel topology is required in a low-profile surface-mount footprint. Evaluate the 60 V breakdown voltage and 9.7 A continuous current rating against circuit load demands. Consider the 0.021 Ω RDS(on) for conduction loss calculations and verify that the PowerPAK SO-8 thermal characteristics meet the system's heat dissipation requirements.

Part Context

This component belongs to the Vishay Siliconix Si7960DP series of dual N-channel MOSFETs. It utilizes the PowerPAK SO-8 leadless package design to minimize board space while maintaining robust electrical performance. The product line emphasizes high-density packaging suitable for modern electronic devices requiring efficient power handling.

Replacement Considerations

Direct replacements must match the dual N-channel configuration, 60 V VDS rating, and PowerPAK SO-8 package dimensions. Verify equivalent RDS(on) and thermal resistance values to ensure compatibility with existing thermal management designs.