ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 6.1A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：6.1A
- Rds On (Max) @ Id, Vgs：23mOhm @ 9.6A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
Download product information
Overview
The SI7964DP-T1-E3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a PowerPAK SO-8 package with a drain-source voltage (VDS) of 60 V and a gate-source voltage (VGS) of ±20 V. The device has a continuous drain current (ID) of 9.6 A at 25 °C and a maximum on-state resistance (RDS(on)) of 0.023 Ω at VGS = 10 V. Total gate charge (Qg) is typically 43 nC. Thermal ratings include a junction temperature range of -55 to 150 °C and a steady-state power dissipation of 3.5 W at 25 °C.
Feature Summary
- Dual configuration for space savings
- TrenchFET power MOSFET technology
- Low thermal resistance PowerPAK package
Applications
- Power management circuits requiring dual channel integration
- DC-DC converter designs
- Motor control applications
Procurement Notes
Verify the specific ordering suffix when purchasing. The E3 suffix indicates lead-free construction. Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as environmental declarations may vary by production batch. Ensure the component meets the required halogen-free standards if specified by IEC 61249-2-21 for the target application.
Selection Notes
Select this component for applications requiring two independent N-channel switches in a compact surface-mount footprint. Evaluate the 0.023 Ω RDS(on) against the expected load current to ensure acceptable conduction losses. Consider the 60 V breakdown voltage relative to the system's peak operating voltage. Verify that the gate drive voltage aligns with the 10 V specification for optimal on-resistance performance.
Part Context
This part belongs to the SI7 series of Vishay Siliconix MOSFETs. It is designed as an alternative to older discrete dual solutions, offering improved thermal performance through the PowerPAK SO-8 package. The product utilizes standard silicon technology optimized for low on-resistance and fast switching characteristics.
Replacement Considerations
Check for direct pin-compatible alternatives within the same Vishay family. Verify that any substitute maintains the 60 V rating and similar RDS(on) values. Ensure the replacement package matches the PowerPAK SO-8 dimensions for board compatibility.
