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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 8A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：22mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1010pF @ 10V
- Power - Max：19.8W, 21.9W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7980DP-T1-GE3 is a dual N-channel MOSFET with an integrated Schottky diode, utilizing TrenchFET technology in a PowerPAK SO-8 package. It features a drain-source voltage of 20 V and continuous drain currents of 8 A at TC = 25 °C. On-state resistance (RDS(on)) is 22 mΩ for Channel 1 and 15 mΩ for Channel 2 at VGS = 10 V. The device includes a Schottky diode with a forward voltage of 0.43 V at 1 A. Total gate charge is typically 17.5 nC for Channel 1 and 22.5 nC for Channel 2. Operating junction temperature ranges from -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration with integrated Schottky diode
- TrenchFET power MOSFET technology
- Lead-free and halogen-free compliant construction
Applications
- Synchronous buck converters
- Game machines
- Notebook computers
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free status. Confirm availability through authorized distributors as supply conditions may vary. Ensure component authenticity by checking manufacturer markings and datasheet revision details prior to integration into production designs.
Selection Notes
Select this component for low-voltage synchronous rectification applications requiring compact surface-mount packaging. Evaluate thermal performance based on PCB copper area and ambient conditions. Verify that the 20 V rating and current capabilities meet the specific circuit requirements for game consoles or portable computing systems.
Part Context
This part belongs to the Vishay Siliconix SI7 series of TrenchFET MOSFETs. It utilizes the PowerPAK SO-8 package, which offers thermal performance comparable to larger packages while maintaining a standard SO-8 footprint. The inclusion of a Schottky diode makes it suitable for high-efficiency power conversion topologies.
Replacement Considerations
Direct replacements within the same family include the SI7980DP-T1-E3 variant, which shares identical electrical characteristics but may differ in environmental compliance specifications.
