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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 7.7A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：7.7A
- Rds On (Max) @ Id, Vgs：17mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs：74nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The SI7983DP-T1-E3 is a dual N-channel Power MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in a compact PowerPAK SO-8 surface-mount package designed for efficient thermal performance. The device features a drain-source voltage rating of 60V and supports continuous drain currents up to 12A at ambient temperature. Key electrical characteristics include a maximum on-resistance of 15 milliohms at 10V gate drive and a total gate charge of 30 nanocoulombs. It operates within a junction temperature range of -55°C to +150°C with a power dissipation capacity of 4.5W.
Feature Summary
- Dual N-channel configuration integrated into a single compact package for space-constrained designs.
- TrenchFET technology provides low on-resistance and optimized switching performance.
- PowerPAK SO-8 package offers enhanced thermal dissipation through improved copper pad connectivity.
Applications
- DC-DC converter synchronous rectification stages
- Load switch applications requiring high current density
- Power management circuits in portable electronic devices
Procurement Notes
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and specific manufacturing lot details against the official datasheet specifications. Ensure that the ordering suffix corresponds to the required packaging format and lead time constraints for your production schedule.
Selection Notes
Select this component when a dual N-channel solution is required in a small footprint. Evaluate the 15 milliohm on-resistance against your conduction loss requirements. Consider the 60V breakdown voltage relative to your system's supply rails. Verify that the PowerPAK SO-8 thermal resistance meets your heat dissipation needs without excessive heatsinking.
Part Context
This part belongs to the Vishay Siliconix SI79xx series of dual MOSFETs. It shares the PowerPAK SO-8 form factor with other members like the SI7948DP and SI7964DP. The series focuses on providing dual-channel functionality in a standard 8-pin outline to simplify PCB layout for bridge and half-bridge topologies.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult the official Vishay Siliconix replacement guide or contact technical support directly for validated cross-reference data before implementing any alternative components.
