SI7983DP-T1-GE3

Overview

The SI7983DP-T1-GE3 is a dual P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in a PowerPAK-SO-8 surface-mount package. The device features a drain-source voltage rating of 30 V and a continuous drain current of 25 A. At a gate-source voltage of 10 V, the on-resistance is specified at 4.2 mΩ. The maximum power dissipation is 5.4 W. Operating characteristics include a threshold voltage of 3 V, a total gate charge of 27 nC, and a junction temperature range from -55 °C to +150 °C.

Feature Summary

• Dual P-channel configuration within a compact PowerPAK-SO-8 footprint
• Low on-resistance achieved through TrenchFET process technology
• Enhanced mode operation with standard gate drive compatibility

Applications

• DC-DC converter output stages
• Load switch applications
• Power management integrated circuits (PMICs)

Procurement Notes

Verify component authenticity by checking for official Vishay markings and datasheet alignment. Confirm RoHS compliance status via manufacturer documentation. Ensure storage conditions meet semiconductor handling standards to prevent moisture sensitivity issues prior to assembly.

Selection Notes

Select this component for designs requiring dual P-channel switching in a small outline package. Evaluate thermal performance against the 5.4 W dissipation limit. Compare gate charge requirements with driver capabilities to ensure adequate switching speed and efficiency.

Part Context

This part belongs to the Vishay SI79xx series of dual MOSFETs. It shares the PowerPAK-SO-8 package form factor with other devices in the lineup but differs in channel count and specific electrical ratings such as voltage and current capacity.

Replacement Considerations

Potential substitutes include SI7983BDP-T1-GE3 or SI7983EDP-T1-GE3. Verify pinout compatibility and electrical parameter equivalence before substitution.