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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 60A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：60A
- Rds On (Max) @ Id, Vgs：5.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：3500pF @ 15V
- Power - Max：46W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7994DP-T1-GE3 is a dual N-channel 30-V (D-S) MOSFET utilizing TrenchFET technology. It features a PowerPAK SO-8 package with two independent channels. The device supports a continuous drain current of 60 A at TC = 25 °C and offers a maximum on-state resistance of 0.0056 Ω at VGS = 10 V and 0.007 Ω at VGS = 4.5 V. Total gate charge is typically 52 nC at VGS = 10 V and 24 nC at VGS = 4.5 V. Operating junction temperature ranges from -55 °C to +150 °C, with a maximum power dissipation of 46 W at TC = 25 °C.
Feature Summary
- Dual N-channel configuration within a single leadless PowerPAK SO-8 package
- TrenchFET technology for low on-state resistance and high efficiency
- Halogen-free construction compliant with RoHS standards
Applications
- System power DC/DC converters
- Notebook computer power management
- Server power distribution
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance status and packaging type. Confirm that the component meets all applicable environmental directives required for the target assembly process. Ensure the datasheet revision matches the design requirements before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring dual isolated N-channel switching in a compact surface-mount footprint. Evaluate thermal performance based on the specified junction-to-case resistance and available PCB copper area. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-state resistance characteristics.
Part Context
This part belongs to the Vishay Siliconix TrenchFET family, designed for high-efficiency power switching applications. The PowerPAK SO-8 package provides thermal performance comparable to larger packages while maintaining a standard SO-8 footprint. It serves as a solution for space-constrained power systems requiring dual channel functionality.
Replacement Considerations
Consult official Vishay documentation for confirmed substitute part numbers. Do not assume functional equivalence with other dual MOSFETs without verifying pinout compatibility and electrical parameter limits.
