SI7997DP-T1-GE3

Overview

The Vishay Siliconix SI7997DP-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology, housed in a leadless PowerPAK SO-8 Dual package. It features a -30 V drain-source voltage rating and supports a continuous drain current of -60 A at a case temperature of 25 °C. The device exhibits a maximum on-state resistance of 0.0055 Ω at VGS = -10 V and 0.0078 Ω at VGS = -4.5 V. Key dynamic parameters include a typical total gate charge of 106 nC and a forward transconductance of 71 S. Thermal performance is characterized by a junction-to-case thermal resistance of 2.2 °C/W.

Feature Summary

• TrenchFET power MOSFET architecture optimized for PWM applications
• Dual configuration with independent channel control within a single compact footprint
• Leadless PowerPAK SO-8 package design providing enhanced thermal dissipation capabilities

Applications

• Battery switching circuits for notebook PCs
• Load switching applications in portable computing devices
• General-purpose low-side or high-side power management

Procurement Notes

Verify the specific ordering suffix to confirm compliance requirements. The GE3 designation indicates lead-free and halogen-free construction. Confirm that the component meets RoHS directives and REACH SVHC standards as defined in the manufacturer's material categorization documentation before finalizing procurement specifications.

Selection Notes

Select this component when a dual P-channel solution is required within space-constrained designs. Ensure the application operates within the specified -30 V drain-source voltage limit. Evaluate the thermal management strategy against the 2.2 °C/W junction-to-case resistance to maintain safe operating temperatures under expected load conditions.

Part Context

This part belongs to the Vishay Siliconix TrenchFET family, which utilizes advanced planar trench technology to minimize on-resistance. The PowerPAK SO-8 Dual package shares the same footprint as standard SO-8 packages but accommodates larger die sizes for improved power handling. This integration allows for direct substitution in existing layouts while offering superior thermal performance compared to traditional leaded packages.

Replacement Considerations

Direct pin-compatible replacements within the same package type should be evaluated based on matching voltage ratings and on-resistance characteristics. Verify that any substitute component maintains equivalent thermal resistance values and gate charge specifications to ensure circuit stability.