SI7998DP-T1-GE3

$1.82

Description：MOSFET 2N-CH 30V 25A PPAK SO8
Series：TrenchFET®

SKU:582dcb5726c1 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 25A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：25A, 30A
Rds On (Max) @ Id, Vgs：9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1100pF @ 15V
Power - Max：22W, 40W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：-
Qualification：-

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SI7998DP-T1-GE3

Overview

The Vishay Siliconix SI7998DP-T1-GE3 is a dual N-channel PowerPAK SO-8 MOSFET featuring TrenchFET technology. It provides a 30 V drain-source voltage rating with optimized PWM performance and 100% UIS testing. The device integrates two independent channels within a single leadless package. Channel 1 offers a maximum on-resistance of 0.0093 Ω at VGS = 10 V, while Channel 2 achieves 0.0053 Ω under identical conditions. Continuous drain currents reach 30 A for Channel 2 and 25 A for Channel 1 at TC = 25 °C. Total gate charge is typically 8.2 nC for Channel 1.

Feature Summary

TrenchFET power MOSFET architecture
PWM optimized switching characteristics
100% Unclamped Inductive Switching (UIS) tested

Applications

System Power DC/DC conversion

Procurement Notes

Verify the specific ordering suffix to confirm lead-free and halogen-free compliance status. Confirm that the component matches the exact document revision referenced in official datasheets. Ensure the supplier provides traceability documentation consistent with Vishay manufacturing standards.

Selection Notes

Select this component for designs requiring high current density in a compact surface-mount footprint. Evaluate thermal resistance requirements against the junction-to-case ratings provided. Consider the distinct electrical characteristics between Channel 1 and Channel 2 when designing asymmetric load circuits.

Part Context

This part belongs to the Vishay Siliconix TrenchFET family utilizing the PowerPAK SO-8 Dual package. It serves as a high-performance alternative to standard SO-8 packages by offering superior thermal dissipation capabilities while maintaining a compatible footprint.