ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3.5A 6MICROFOOT
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.5A
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：1V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-MICRO FOOT®CSP
- Supplier Device Package：6-Micro Foot™ (2.36x1.56)
- Grade：-
- Qualification：-
Download product information
Overview
The SI8901EDB-T2-E1 is a single N-channel enhancement mode MOSFET manufactured by Vishay Siliconix using TrenchFET technology. It features a MicroFoot-4 surface-mount package with dimensions of 0.8 x 0.8 mm. The device supports a drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 3.5 A at 25°C. Key electrical parameters include a maximum on-resistance (Rds(on)) of 55 mΩ at Vgs = 4.5 V, a gate charge (Qg) of 6 nC, and a threshold voltage (Vgs(th)) of 350 mV. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 900 mW.
Feature Summary
- Utilizes TrenchFET planar technology for low on-resistance and fast switching performance.
- Features an ultra-small MicroFoot-4 footprint suitable for space-constrained portable applications.
- Designed for logic-level gate drive compatibility with low input capacitance.
Applications
- Load switches in mobile phones and handheld devices
- Power management circuits in portable electronics
- Battery protection and charging circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as availability may vary by region and production lot.
Selection Notes
Select this component when a compact N-channel MOSFET with 20V capability and low Rds(on) is required. Ensure the application voltage and current ratings remain within the specified limits. Consider thermal management requirements given the small package size and 900 mW power dissipation rating.
Part Context
This part belongs to the SI8 series of TrenchFET MOSFETs from Vishay Siliconix, designed for high-density surface-mount applications. The MicroFoot-4 package provides a significant reduction in board area compared to traditional SOT-23 packages while maintaining comparable electrical performance for low-voltage switching tasks.
Replacement Considerations
Check for direct pin-compatible alternatives such as the SI8824EDB-T2-E1 or SI8902EDB-T2-E1 from the same manufacturer family. Verify that any substitute matches the 20V Vds, N-channel configuration, and MicroFoot-4 package dimensions before implementation.
